A Q-Modulation Technique for Efficient Inductive Power Transmission.
A Q-Modulation Technique for Efficient Inductive Power Transmission.
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DOI：
10.1109/jssc.2015.2453201
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发表时间：
2015-12
影响因子：
5.4
通讯作者：
Ghovanloo M
中科院分区：
文献类型：
--
作者：
Kiani M;Lee B;Yeon P;Ghovanloo M
一种用于高效感应电力传输的全集成电源管理ASIC已经提出，能够使用称为Q调制的方法进行自动负载变换。Q调制是一种自适应方案，其针对电感链路中的大范围负载（RL）和耦合距离（d23）变化提供负载匹配，以保持高功率传输效率（PTE）。它适用于为植入式微电子设备（IMD）感应供电、为移动的电子设备和电动汽车充电。在Q调制中，检测接收器（Rx）LC谐振回路中的感应电流的过零点，并且低损耗开关在功率载波周期的一部分内斩波Rx LC谐振回路，以形成高Q LC谐振回路并存储最大能量，然后通过断开开关将最大能量传递到RL。通过调整占空比（D），可以动态地调制Rx LC谐振回路的加载Q以补偿RL的变化。采用0.35 μm标准CMOS工艺制作了一个面积为4.8 mm2的调Q电源管理（QMPM）原型芯片。在1.45 W无线功率传输设置中，使用工作在2 MHz的E类功率放大器（PA），QMPM通过补偿D = 45%时RL的150 Ω变化，成功地将电感链路PTE和总功率效率分别提高了98.5%和120.7%（d23 = 8 cm）。
A fully-integrated power management ASIC for efficient inductive power transmission has been presented capable of automatic load transformation using a method, called Q-modulation. Q-modulation is an adaptive scheme that offers load matching against a wide range of loading (RL) and coupling distance (d23) variations in inductive links to maintain high power transfer efficiency (PTE). It is suitable for inductive powering implantable microelectronic devices (IMDs), recharging mobile electronics, and electric vehicles. In Q-modulation, the zero-crossings of the induced current in the receiver (Rx) LC-tank are detected and a low-loss switch chops the Rx LC-tank for part of the power carrier cycle to form a high-Q LC-tank and store the maximum energy, which is then transferred to RL by opening the switch. By adjusting the duty cycle (D), the loaded-Q of the Rx LC-tank can be dynamically modulated to compensate for variations in RL. A Q-modulation power management (QMPM) prototype chip was fabricated in a 0.35-μm standard CMOS process, occupying 4.8 mm2. In a 1.45 W wireless power transfer setup, using a class-E power amplifier (PA) operating at 2 MHz, the QMPM successfully increased the inductive link PTE and the overall power efficiency by 98.5% and 120.7% at d23 = 8 cm, respectively, by compensating for 150 Ω variation in RL at D = 45%.