Chapter 9.2 Layer stacking

Chapter 9.2 Layer stacking
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第 9.2 章 层堆叠

DOI:
10.1107/97809553602060000618
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发表时间:
2006
期刊:
International Tables for Crystallography
影响因子:
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通讯作者:
D. Pandey
D. Pandey
中科院分区:
--
文献类型:
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作者:
S. D̂uroviĉ;P. Krishna;D. Pandey

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本章的第一部分描述了密排结构中的层堆叠。以SiC和ZnS、CdI_2和GaSe的结构为例。讨论了层错、构造空洞和无序等问题。一般多型结构中的层堆叠在本章的第二节中描述。多型的概念解释和对称方面的多型被认为是。文中给出了三个例子来说明多型性分析的三种主要方法。 保留字: 基本结构特征; 碘化镉; 圆填料; 紧密堆积结构; 去对称化; 硒化镓; 无机化合物; 格子; 叠层; 最大有序多型度; 氯化硫化汞; 密排结构的符号; 有序-无序; 包装; 页硅酸盐; 多型体; 多型性; 空间群; 球体; 堆垛顺序; 锑钒矿; 二氯化二硫化三汞; 邻近条件; 紧密堆积结构中的空隙; 硫化锌
The first section of this chapter describes layer stacking in close-packed structures. The structures of SiC and ZnS, CdI2 and GaSe are used as examples. Stacking faults, voids in structures and disorder are discussed. Layer stacking in general polytypic structures is described in the second section of the chapter. The notion of polytypism is explained and symmetry aspects of polytypism are considered. Three examples illustrating the three main methods of analysis of polytypism are given. Keywords: basic structural features; cadmium iodide; circle packings; close-packed structures; desymmetrization; gallium selenide; inorganic compounds; lattices; layer stacking; maximum degree of order polytypes; mercury sulfide chloride; notations for close-packed structures; order–disorder; packing; phyllosilicates; polytypes; polytypism; space groups; spheres; stacking sequence; stibivanite; trimercury dichloride disulfide; vicinity condition; voids in close-packed structures; zinc sulfide