Chapter 9.2 Layer stacking
Chapter 9.2 Layer stacking
复制标题
第 9.2 章 层堆叠
DOI:
10.1107/97809553602060000618
复制
发表时间:
2006
期刊:
影响因子:
--
通讯作者:
D. Pandey
中科院分区:
文献类型:
--
作者:
S. D̂uroviĉ;P. Krishna;D. Pandey
The first section of this chapter describes layer stacking in close-packed structures. The structures of SiC and ZnS, CdI2 and GaSe are used as examples. Stacking faults, voids in structures and disorder are discussed. Layer stacking in general polytypic structures is described in the second section of the chapter. The notion of polytypism is explained and symmetry aspects of polytypism are considered. Three examples illustrating the three main methods of analysis of polytypism are given.
Keywords:
basic structural features;
cadmium iodide;
circle packings;
close-packed structures;
desymmetrization;
gallium selenide;
inorganic compounds;
lattices;
layer stacking;
maximum degree of order polytypes;
mercury sulfide chloride;
notations for close-packed structures;
order–disorder;
packing;
phyllosilicates;
polytypes;
polytypism;
space groups;
spheres;
stacking sequence;
stibivanite;
trimercury dichloride disulfide;
vicinity condition;
voids in close-packed structures;
zinc sulfide