Field enhancement in apertureless near-field scanning optical microscopy
Field enhancement in apertureless near-field scanning optical microscopy
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DOI：
10.1364/josaa.18.002998
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发表时间：
2001-12-01
影响因子：
1.9
通讯作者：
Gallagher, A
中科院分区：
文献类型：
--
作者：
Bohn, JL;Nesbitt, DJ;Gallagher, A
用多极子技术研究了无孔近场扫描光学显微镜探头的近场，得到了硅探头尖端和玻璃衬底附近的光场。结果表明，在硅尖附近可以实现~gt；15相对于入射场的电场增强，这意味着强度增强了几个数量级。这种增强既源于细长探头的天线效应，也源于当探头靠近衬底表面且其图像偶极子起作用时的邻近效应。(C)2001年美国光学学会。
The near field of an apertureless near-field scanning optical microscopy probe is investigated with a multiple-multipole technique to obtain optical fields in the vicinity of a silicon probe tip and a glass substrate. The results demonstrate that electric field enhancements of > 15 relative to the incident fields can be achieved near a silicon tip, implying intensity enhancements of several orders of magnitude. This enhancement arises both from the antenna effect of the elongated probe and from a proximity effect when the probe is near the substrate surface and its image dipoles play a role. (C) 2001 Optical Society of America.