Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
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通过分子束外延在 (775)B 取向 GaAs 衬底上生长的自组织 GaAs 量子线激光器
DOI：
10.1063/1.123365
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发表时间：
1999
影响因子：
4
通讯作者：
S. Ikawa
中科院分区：
文献类型：
--
作者：
M. Higashiwaki;S. Shimomura;S. Hiyamizu;S. Ikawa
采用分子束外延技术在（775）B取向的GaAs衬底上生长了GaAs/（GaAs）4（AlAs）2自组织量子线（QWR）激光器。在GaAs/（GaAs）_4（AlAs）_2量子阱中，在厚的部分自然地形成了具有波纹状AlAs-on-GaAs上界面和平坦的GaAs-on-AlAs下界面的QWR。QWR的密度高达8×106 cm−1。 以自组织（775）B GaAs/（GaAs）4（AlAs）2 QWR作为有源区的条形激光器，在20 °C下振荡，对于未涂覆的反射镜，阈值电流密度约为3 kA/cm 2。
Self-organized GaAs/(GaAs)4(AlAs)2 quantum-wire (QWR) lasers were grown on (775)B-oriented GaAs substrates by molecular-beam epitaxy. The QWRs were naturally formed at thick parts in the GaAs/(GaAs)4(AlAs)2 quantum well with a corrugated AlAs-on-GaAs upper interface and a flat GaAs-on-AlAs lower interface. The density of the QWRs was as high as 8×106 cm−1. Stripe-geometry lasers with the self-organized (775)B GaAs/(GaAs)4(AlAs)2 QWRs as an active region oscillated at 20 °C with threshold current densities of about 3 kA/cm2 for uncoated mirrors.
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H