High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.
High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.
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DOI：
10.1364/oe.18.027582
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发表时间：
2010-12
期刊：
影响因子：
3.8
通讯作者：
B. Rudin;V. Wittwer;D. Maas;M. Hoffmann;O. Sieber;Y. Barbarin;M. Golling;T. Südmeyer;U. Keller
中科院分区：
文献类型：
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作者：
B. Rudin;V. Wittwer;D. Maas;M. Hoffmann;O. Sieber;Y. Barbarin;M. Golling;T. Südmeyer;U. Keller
高功率超快激光器在众多工业和科学应用中具有重要意义。然而，当前的多瓦系统基于相对复杂的激光概念，例如使用附加的腔内元件来形成脉冲。迈向更高级别的集成将降低复杂性、包装和制造成本，这些都是大规模生产的重要要求。半导体激光器已被广泛应用于此类应用，而光泵浦垂直外腔表面发射激光器(VECSEL)最有希望应用于更高功率的应用，在基横模(>；20W)产生最高功率。利用半导体可饱和吸收镜(SESAM)的被动锁模，已经展示了超短脉冲，例如实现了2.1W的平均功率、低于100微秒的脉冲持续时间和50 GHz的脉冲重复率。以前，MIXSEL(锁模集成外腔表面发射激光器)将增益元件和吸收元件集成到一个晶片中，但平均输出功率有限(<；200 mW)。我们展示了MIXSEL的功率扩展概念，在反共振结构设计中使用了优化的量子点可饱和吸收体，并通过去除晶片并将8微米厚的MIXSEL结构直接安装到CVD-钻石散热器上来改进热管理。只有两个组件的简单直腔在2.5 GHz的重复频率下产生了28ps的脉冲，平均输出功率为6.4W，高于任何其他模型锁定的半导体激光器。
High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser.