Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
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DOI：
10.1088/0957-4484/23/21/215202
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发表时间：
2012-06-01
期刊：
影响因子：
3.5
通讯作者：
Williams, R. Stanley
中科院分区：
文献类型：
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作者：
Pickett, Matthew D.;Williams, R. Stanley
我们建立并测量了具有阈值开关（电流控制的负微分电阻）的纳米级氧化铌交叉点器件的动态电流与时间的关系。发现110 × 110 nm（2）器件的开关速度为Δ t（ON）= 700 ps和Δ t（OFF）= 2.3 ns，而开关能量为100 fJ的量级。我们推导出一个新的动力学模型的基础上焦耳加热率的热驱动绝缘体到金属的相变，准确地再现了实验结果，并采用该模型来估计开关时间和能量缩放行为的这种设备下降到10 nm的规模。这些结果表明，阈值开关可以在混合CMOS纳米电子电路的实际利益。
We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 x 110 nm(2) devices were found to be Delta t(ON) = 700 ps and Delta t(OFF) = 2.3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.