Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells
Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells
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DOI：
10.1063/1.2012531
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发表时间：
2005-08
影响因子：
4
通讯作者：
Jianping Zhang;D. Jiang;Qian Sun;Jin-yun Wang;Y. Wang;J. P. Liu;J. X. Chen;R. Jin;Juye Zhu;H. Yang;T. Dai;Q. Jia
中科院分区：
文献类型：
--
作者：
Jianping Zhang;D. Jiang;Qian Sun;Jin-yun Wang;Y. Wang;J. P. Liu;J. X. Chen;R. Jin;Juye Zhu;H. Yang;T. Dai;Q. Jia
The influence of dislocations on photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The omega scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN/GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low. (C) 2005 American Institute of Physics.
