Thin film growth by pulsed laser deposition

Thin film growth by pulsed laser deposition
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脉冲激光沉积薄膜生长

DOI:
10.1007/978-3-662-08251-5_80
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发表时间:
1994
期刊:
影响因子:
--
通讯作者:
I. Boyd
I. Boyd
中科院分区:
--
文献类型:
--
作者:
I. Boyd

文献摘要

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描述了使用脉冲蒸发沉积(PLD)来生长各种薄的多组分膜,包括电介质层、保护层和超导层。简要回顾了激光-靶相互作用和材料从被照射表面去除的基本原理。此外,特别是该技术的优点和缺点进行了讨论,并提出了未来的发展方向。
The use of Pulsed Iaver Deposition (PLD) to grow a variety of thin multicomponent films, including dielectric, protective, and superconducting layers, is described. The underlying principles governing the laser-target interaction and removal of material from the irradiated surface are briefly reviewed. Additionally, particular advantages and disadvantages of the technique are discussed, and future directions proposed.