Oxidation behavior of a fully dense polymer-derived amorphous silicon carbonitride ceramic
Oxidation behavior of a fully dense polymer-derived amorphous silicon carbonitride ceramic
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DOI：
10.1111/j.1551-2916.2004.00483.x
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发表时间：
2004-03-01
影响因子：
3.9
通讯作者：
An, LN
中科院分区：
文献类型：
--
作者：
Bharadwaj, L;Fan, Y;An, LN
采用一种新的压力辅助热解技术制备了高分子衍生的无定形碳氮化硅（SiCN）陶瓷，研究了该陶瓷在900 ℃ ~ 1200 ℃温度范围内的氧化行为。氧化动力学研究通过测量氧化层的厚度。发现数据符合典型的抛物线动力学。测得的SiCN的氧化速率常数和活化能与CVD和单晶SiC的氧化速率常数和活化能接近。结果表明，SiCN的氧化机理与SiC相同：氧通过二氧化硅层扩散。
The oxidation behavior of a polymer-derived amorphous silicon carbonitride (SiCN) ceramic was studied at temperature range of 900degrees-1200degreesC using fully dense samples, which were obtained using a novel pressure-assisted pyrolysis technique. The oxidation kinetics was investigated by measuring the thickness of oxide layers. The data were found to fit a typical parabolic kinetics. The measured oxidation rate constant and activation energy of the SiCN are close to those of CVD and single-crystal SiC. The results suggest that the oxidation mechanism of the SiCN is the same as that of SiC: oxygen diffusion through a silica layer.