High-temperature single-crystal 3C-SiC capacitive pressure sensor
High-temperature single-crystal 3C-SiC capacitive pressure sensor
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DOI：
10.1109/jsen.2004.830301
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发表时间：
2004-08-01
影响因子：
4.3
通讯作者：
Ko, WH
中科院分区：
文献类型：
--
作者：
Young, DJ;Du, JG;Ko, WH
提出了一种适用于高温传感的单晶3C-碳化硅电容式压力传感器。该原型器件由一个半径为400微米、厚度为0.5微米的边夹紧的3C-SiC圆形膜片组成，悬挂在硅衬底上一个2微米的密封腔上。采用常压化学气相沉积法在直径为100 mm的硅衬底上外延生长了3C-SiC膜。制造的传感器显示出高达400摄氏度的高温传感能力，受测试设置的限制。在400℃时，该器件实现了灵敏度在1100至1760托之间的线性特性响应。7.7fF/托，线性度为2.1%，滞后为3.7%，传感重复性为39托(52mbar)。通过选择合适的器件几何参数，可以实现多种传感器规格，例如线性范围、灵敏度和电容值。
Single-crystal 3C-silicon carbide (SiC) capacitive pressure sensors are proposed for high-temperature sensing applications. The prototype device consists of an edge-clamped circular 3C-SiC diaphragm with a radius of 400 mum and a thickness of 0.5 mum suspended over a 2-mum sealed cavity on a silicon substrate. The 3C-SiC film is grown epitaxially on a 100-mm diameter silicon substrate by atmospheric pressure chemical vapor deposition. The fabricated sensor demonstrates a high-temperature sensing capability up to 400 degreesC, limited by the, test setup. At 400 degreesC, the device achieves a linear characteristic response between 1100 and 1760 torr with a sensitivity. of 7.7 fF/torr, a linearity of 2.1%, and a hysterisis of 3.7% with a sensing repeatability of 39 torr (52 mbar). A wide range of sensor specifications, such as linear ranges, sensitivities, and capacitance values, can be achieved by choosing the proper device geometrical parameters.