J -kink domain walls and the DBI action
J -kink domain walls and the DBI action
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J 扭结磁畴壁和 DBI 作用
DOI：
10.1007/jhep06(2015)160
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发表时间：
2015
影响因子：
5.4
通讯作者：
M. Eto
中科院分区：
文献类型：
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作者：
M. Eto
本文研究了D = 4大质量σ P1 σ模型中的J -扭畴壁.畴壁不是静止的，而是静止的，因为它们在内部S1空间中以频率ω和沿着畴壁的动量k旋转。它们的特征是守恒电流Jμ =（Q，J），并可分为磁（J2 < 0）、零（J2 = 0）和电（J2 > 0）三种类型。在一个自然的假设下，即畴壁的低能有效作用与D = 4的DBI作用是对偶的，我们得到了J -扭结畴壁与具有恒定磁场B和电场E的膜之间的重合。我们还发现（Q，J，ω，k）与（B，E，H，D）是对偶的，其中H和D分别是磁化场和位移场。
A bstractWe study J -kink domain walls in D = 4 massive ℂP1 sigma model. The domain walls are not static but stationary, since they rotate in an internal S1 space with a frequency ω and a momentum k along the domain wall. They are characterized by a conserved current Jμ = (Q, J), and are classified into magnetic (J2 < 0), null (J2 = 0), and electric (J2 > 0) types. Under a natural assumption that a low energy effective action of the domain wall is dual to the D = 4 DBI action for a membrane, we are lead to a coincidence between the J -kink domain wall and the membrane with constant magnetic field B and electric field E. We also find that (Q, J, ω, k) is dual to (B, E, H, D) with H and D being a magnetizing field and a displacement field, respectively.
Dyonic非阿贝尔涡旋：张力和高阶导数修正
DOI：
--
发表时间：
2015
期刊：
影响因子：
--
作者：
Giroletti;M.;Lico;R.;Hada;K.;and Giovannini;G.;衛藤 稔
通讯作者：
衛藤 稔