Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide
Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide
复制标题
使用梯度铟 n-InxGa1-xN 下波导抑制 GaN 基绿色激光二极管中的光场泄漏
DOI：
10.1016/j.spmi.2019.106153
复制
发表时间：
2019-08-01
影响因子：
3.1
通讯作者：
Zhang, Liqun
中科院分区：
文献类型：
--
作者：
Liang, Feng;Zhao, Degang;Zhang, Liqun
GaN基绿色激光二极管（LD）中光场向GaN衬底的泄漏会降低LD的峰值光增益，削弱LD的输出性能。本文提出了一种铟组分渐变的n-InxGa 1-xN下波导结构，避免了使用厚n型Al 0. 08 Ga 0. 92 N包层或高铟含量的n-InxGa 1-xN下波导结构，使其更易于在高材料质量下生长，同时可以有效降低GaN基绿色LD的光场泄漏。利用LASTIP计算了LD的光电特性，结果表明，在绿色LD中采用梯度铟组分LWG，光场集中在有源区附近，有效地消除了光场泄漏，光电性能得到明显改善。
Optical field leakage to the GaN substrate in GaN-based green laser diodes (LDs) can reduce the peak optical gain and weaken the output performance of LDs. In this study, a graded-indium composition n-InxGa1-xN lower waveguide (LWG) structure is proposed which should be more feasible to grow with high material quality and at the same time can effectively reduce the optical field leakage in GaN-based green LD, avoiding to use thick n-type Al0.08Ga0.92N cladding layer or thick n-InxGa1-xN LWG with high indium content. According to the optical and electrical characteristics of LDs calculated by LASTIP, it is found that the optical field has been concentrated around the active area and the optical field leakage has been eliminated effectively using graded-indium composition LWG in green LDs, which results in an obvious improvement of optical and electrical performance.