Experimental Evidence for Epitaxial Silicene on Diboride Thin Films
Experimental Evidence for Epitaxial Silicene on Diboride Thin Films
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DOI：
10.1103/physrevlett.108.245501
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发表时间：
2012-06-11
影响因子：
8.6
通讯作者：
Yamada-Takamura, Yukiko
中科院分区：
文献类型：
--
作者：
Fleurence, Antoine;Friedlein, Rainer;Yamada-Takamura, Yukiko
作为石墨烯的Si对应物，硅烯可以被定义为至少部分sp2杂化的、原子厚的Si蜂窝层，具有π电子带。在这里，我们表明，二维，外延硅烯形式通过表面偏析二硼化锆薄膜生长在硅晶片上。一个特定的屈曲硅烯诱导的外延关系与二硼化物表面导致一个直接的π电子带隙在伽马点。这些结果表明，硅烯的屈曲，从而修改的电子性质的外延应变。
As the Si counterpart of graphene, silicene may be defined as an at least partially sp(2)-hybridized, atom-thick honeycomb layer of Si that possesses pi-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct pi-electronic band gap at the Gamma point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain.