Pushing deep greyscale lithography beyond 100-µm pattern depth with a novel photoresist
Pushing deep greyscale lithography beyond 100-µm pattern depth with a novel photoresist
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使用新型光致抗蚀剂将深灰度光刻技术推向 100 µm 图案深度以上
DOI：
10.1117/12.2661526
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
G. Gruetzner
中科院分区：
文献类型：
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作者：
C. Schuster;G. Ekindorf;A. Voigt;A. Schleunitz;G. Gruetzner
用于在光致抗蚀剂中制造复杂的 2.5D 和自由形状微结构的灰度光刻技术在先进微光学元件的制造中越来越受到业界的关注。由此获得的结构可作为将图案转移到最终永久应用材料的不同方法的母版或模板，例如折射和衍射透镜、闪耀光栅、光束整形器等。然而，许多此类应用需要超过 100 μm 的大结构高度，而这在以前是不容易实现的。我们推出了一种新型光刻胶 mr-P 22G_XP，可以实现非常深的图案的灰度光刻。解决了光刻胶化学引起的限制图案深度的问题。通过该原型的易于访问的设置、经过深思熟虑的光刻胶成分选择以及专注于激光直写的光刻工艺调整，可以实现 120 μm 的灰度图案深度，并有望实现更深至 140-150 μm 的图案。
Greyscale lithography for the manufacture of complex 2.5D and freeform microstructures in photoresists receives increasing attention from industry for the fabrication of advanced micro-optical elements. The thus obtained structures serve as master or template for different methods of pattern transfer into materials for final, permanent applications, such as refractive and diffractive lenses, blazed gratings, beam-shapers etc. However, many such applications require large structure heights beyond 100 μm which was not easily accessible until now. We present a novel photoresist, mr-P 22G_XP, enabling greyscale lithography of very deep patterns. Issues limiting the pattern depth caused by the photoresist chemistry were addressed. Greyscale pattern depths of 120 μm were possible with an easily accessible set-up with this prototype, with a well-considered choice of photoresist ingredients, and lithography process adjustments focusing on laser direct writing, with the prospect of even deeper patterns up to 140–150 μm.