Interface analysis of the system Si/YBa2Cu3O7−x
Interface analysis of the system Si/YBa2Cu3O7−x
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Si/YBa2Cu3O7−x 系统的界面分析
DOI：
10.1007/bf00321569
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
W. Göpel
中科院分区：
文献类型：
--
作者：
C. Ziegler;F. Baudenbacher;H. Karl;H. Kinder;W. Göpel
摘要研究了不同制备条件和基底表面取向对硅上 YBa2Cu3O7−x (YBCO) 薄膜超导性能的影响。进行了比较电学和表面光谱测量。 SAM 和 SIMS 深度剖面分析显示，对于 Tc<76 K 的样品，钡在超导体和硅之间的界面处富集。与 YBCO 上的硅薄膜获得的 XPS 数据进行比较，表明在这些条件下，在界面处形成了硅酸钡和硅酸钇。
SummaryThe influence of different preparation conditions and substrate surface orientations on the superconducting properties of thin YBa2Cu3O7−x (YBCO) films on silicon was studied. Comparative electrical and surface spectroscopic measurements were performed. SAM and SIMS depth profile analysis show an enrichment of barium at the interface between the superconductor and silicon for samples with Tc<76 K. Comparison with XPS data obtained for thin silicon films on YBCO indicates the formation of barium and yttrium silicates at the interface under these conditions.