Buffer-layer-enhanced growth of a single-domain LaB6 (100) epitaxial thin film on a MgO (100) substrate via pulsed laser deposition
Buffer-layer-enhanced growth of a single-domain LaB6 (100) epitaxial thin film on a MgO (100) substrate via pulsed laser deposition
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DOI：
10.1016/j.jcrysgro.2011.07.001
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发表时间：
2011-09-01
影响因子：
1.8
通讯作者：
Yoshimoto, M.
中科院分区：
文献类型：
--
作者：
Kato, Y.;Arai, H.;Yoshimoto, M.
采用超高真空脉冲激光沉积技术，在MgO（1 0 0）和蓝宝石（α - al2o3）（0 0 0 1）衬底上插入2-3 nm厚的外延SrB6缓冲层，研究了LaB6（1 0 0）薄膜的外延生长。反射高能电子衍射、x射线衍射和拉曼散射光谱测量证明，LaB6 (1 0 0)/SrB6 (1 0 0)/MgO（1 0 0）衬底的异质外延结构为单畴，而LaB6 (1 0 0)/SrB6(1 0 0)/蓝宝石（0 0 0 1）衬底的异质外延结构为三畴。没有缓冲层的LaB6薄膜不具有外延性；相反，它们发展成具有随机平面内结构的多晶薄膜。缓冲层对LaB6薄膜的初始生长有很大的影响。外延LaB6薄膜在12 ~ 300 K温度范围内表现出几乎恒定的电阻率。在室温下，MgO衬底上的LaB6（1 0 0）单畴外延薄膜的电阻率比蓝宝石衬底上的LaB6（1 0 0）三畴外延薄膜的电阻率小约5倍。(C) 2011 Elsevier B.V.版权所有
Epitaxial growth of LaB6 (1 0 0) thin films was examined on MgO (1 0 0) and sapphire (alpha-Al2O3) (0 0 0 1) substrates with insertion of a 2-3 nm-thick epitaxial SrB6 buffer layer by pulsed laser deposition in ultra-high vacuum. Reflection high-energy electron diffraction, X-ray diffraction, and the Raman scattering spectroscopy measurements proved that the heteroepitaxial structure of the LaB6 (1 0 0)/SrB6 (1 0 0)/MgO (1 0 0) substrate has a single-domain, while and that of the LaB6 (1 0 0)/SrB6 (1 0 0)/sapphire (0 0 0 1) substrate have three domains. LaB6 thin films grown without the buffer layer were not epitaxial; instead, they developed as polycrystalline films with a random in-plane configuration. The buffer layer greatly affected the initial growth of the LaB6 thin films. Epitaxial LaB6 thin films exhibited metallic behavior with almost constant resistivities in the temperature range 12-300 K. At room temperature, the resistivities of single-domain LaB6 (1 0 0) epitaxial thin films on MgO substrates were about 5 times smaller than those of the three-domain LaB6 (1 0 0) epitaxial thin films on the sapphire substrates. (C) 2011 Elsevier B.V. All rights reserved.