High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path
High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path
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DOI：
10.35848/1882-0786/ac18b0
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发表时间：
2021-08
影响因子：
2.3
通讯作者：
H. Kino;T. Fukushima;Tetsu Tanaka
中科院分区：
文献类型：
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作者：
H. Kino;T. Fukushima;Tetsu Tanaka
反钙钛矿型氮化锰化合物在室温下具有平均自由程的饱和特性。因此，这种化合物在近似室温下显示出平坦的电阻-温度曲线。在本文中，我们提出了一个氮化锰电阻器的高热稳定性系统。我们使用互补金属氧化物半导体兼容工艺制备并评估了微/纳米级氮化锰化合物电阻器。所制备的氮化锰复合电阻器的热系数与其它电阻率温度系数接近于零的材料一样低。这些结果表明，氮化锰化合物可以实现更高的热稳定性。
Antiperovskite manganese nitride compounds possess the saturation characteristics of the mean free path at an approximate room temperature. Therefore, such compounds show a flat resistance–temperature curve at an approximate room temperature. In this paper, we propose a manganese nitride resistor for high-thermal-stability systems. We fabricated and evaluated the micro/nanoscale manganese nitride compound resistors using the complementary metal-oxide-semiconductor-compatible process. The thermal coefficient of the fabricated manganese nitride compound resistor was as low as that of other near-zero temperature-coefficient of resistivity materials. These results indicate that manganese nitride compounds can achieve higher thermal stability.