Model calculation for the field enhancement factor of carbon nanotube
Model calculation for the field enhancement factor of carbon nanotube
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DOI：
10.1063/1.1814439
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发表时间：
2004-11
影响因子：
3.2
通讯作者：
Xinshi Wang;Min-quan Wang;P. He;Y. Xu;Zhenhua Li
中科院分区：
文献类型：
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作者：
Xinshi Wang;Min-quan Wang;P. He;Y. Xu;Zhenhua Li
为了估算碳纳米管在平面阴极表面上的顶场增强因子，研究了平行阳极板和阴极板之间的悬浮球的简单模型。当阳极-阴极距离d远大于碳纳米管的高度h时，用镜像法得到碳纳米管的场增强因子β0= hscinp +3. 5，比米勒的早期工作稍有改进。最后，讨论了阴阳极间距对增强因子的影响，并将碳纳米管增强因子的表达式修正为β= hscinp +3.5 +A（hscind）3，其中A为常数。这表明相对较小的阳极-阴极距离对碳纳米管场增强因子的影响比之前估计的要弱得多。因此，我们可以通过减小阳极-阴极距离在一定程度上降低阈值电压。碳纳米管的长径比越大，阴阳极间距越小。
To estimate the apex field enhancement factor associated with carbon nanotube on a planar cathode surface, the simple model of floated sphere between parallel anode and cathode plates was studied. When the anode-cathode distance d is much larger than the height h of carbon nanotube, the field enhancement factor of carbon nanotube was given as the following expression β0=h∕ρ+3.5 with the image method, which is a little than the early work of Miller. Finally, the influence of the anode-cathode distance on the enhancement factor was also discussed and the expression of enhancement factor of carbon nanotube should be modified to be β=h∕ρ+3.5+A(h∕d)3, where A is the constant. This shows a much weaker influence of the relatively smaller anode-cathode distance on the field enhancement factor of carbon nanotube than that estimated earlier. Thus, we can lower the threshold voltage to some extent by the decrease of the anode-cathode distance. The higher aspect ratio of carbon nanotube and the lower anode-cathode di...