FERROELECTRIC SCHOTTKY DIODE
FERROELECTRIC SCHOTTKY DIODE
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DOI：
10.1103/physrevlett.73.2107
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发表时间：
1994-10-10
影响因子：
8.6
通讯作者：
KRIJN, MPCM
中科院分区：
文献类型：
--
作者：
BLOM, PWM;WOLF, RM;KRIJN, MPCM
由半导体铁电材料和高功函数金属组成的肖特基接触显示出半导体导电特性。在由0.2 μ m的铁电PbTiO 3膜、Au肖特基接触和La 0.5Sr 0.5CoO 3欧姆底电极组成的结构中获得了约2个数量级的开/关比。的观察结果解释的铁电肖特基二极管的耗尽宽度是由在金属-铁电界面的内部电场的极化依赖性的模型。
A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 mu m ferroelectric PbTiO3 film, a Au Schottky contact, and a La0.5Sr0.5CoO3 Ohmic bottom electrode. The observations are explained by a model in which the depletion width of the ferroelectric Schottky diode is determined by the polarization dependence of the internal electric field at the metal-ferroelectric interface.