Fractional quantum Hall effect in CVD-grown graphene
Fractional quantum Hall effect in CVD-grown graphene
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DOI：
10.1088/2053-1583/abae7b
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发表时间：
2020-10-01
期刊：
影响因子：
5.5
通讯作者：
Stampfer, C.
中科院分区：
文献类型：
--
作者：
Schmitz, M.;Ouaj, T.;Stampfer, C.
我们展示了在低于 3 T 至 35 T 的磁场中通过化学气相沉积 (CVD) 生长的石墨烯中出现分数量子霍尔态，其中 CVD 石墨烯是干转移的。有效的复合费米子填充因子高达 nu* = 4 是可见的，并且更高阶的复合费米子态（附加四个通量量子）开始在最高场出现。我们的结果表明，CVD 生长的石墨烯的量子迁移率与剥离石墨烯相当，更具体地说，p/3 分数量子霍尔态的能隙高达 30 K，与其他基于剥离石墨烯的硅栅器件中观察到的能隙相当。
We show the emergence of fractional quantum Hall states in graphene grown by chemical vapor deposition (CVD) for magnetic fields from below 3 T to 35 T where the CVD-graphene was dry-transferred. Effective composite-fermion filling factors up to nu* = 4 are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that thep/3 fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.