Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis
Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis
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DOI：
10.1016/s0022-0248(99)00868-4
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发表时间：
2000-03-01
影响因子：
1.8
通讯作者：
Miles, RW
中科院分区：
文献类型：
--
作者：
Reddy, KTR;Gopalaswamy, H;Miles, RW
在350 ℃的温度下，使用乙酸锌在异丙醇中的前体溶液，通过喷雾热解技术将掺杂镓的氧化锌薄膜沉积到Corning 7059玻璃基板上。使用不同的镓浓度来制备膜，保持其它沉积参数例如空气和溶液流速和溶液浓度恒定。结构的变化。研究了掺杂浓度对薄膜电学和光学性能的影响。X射线衍射分析表明，薄膜为多晶结构，具有（0 0 2）择优取向。研究了不同掺杂浓度下的织构系数和晶粒尺寸。具有5.0原子%镓的膜具有1.5 X 10（-3）欧姆cm的电阻率和85%的透射率，具有3.35 eV的能带隙。(C)2000 Elsevier Science B. V.保留所有权利。
Gallium-doped zinc oxide thin films were deposited by the spray pyrolysis technique onto Coming 7059 glass substrates at a temperature of 350 degrees C using a precursor solution of zinc acetate in isopropyl alcohol. The films were prepared using different gallium concentrations keeping the other deposition parameters such as air and solution Row rates and solution concentration constant. The variations of the structural. electrical and optical properties with the doping concentration were investigated. X-ray diffraction data showed that the films were polycrystalline with the (0 0 2) preferred orientation. The textur e coefficient and grain size were evaluated for different doping concentrations. The films with 5.0 at % gallium had a resistivity of 1.5 x 10(-3) Ohm cm and a transmittance of 85% with an energy band gap of 3.35 eV. (C) 2000 Elsevier Science B.V. All rights reserved.