Depth profiling of melting and metallization in Si(111) and Si(001) surfaces.
Depth profiling of melting and metallization in Si(111) and Si(001) surfaces.
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Si(111) 和 Si(001) 表面熔化和金属化的深度分析。
DOI：
10.1103/physrevlett.107.166103
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发表时间：
2011
影响因子：
8.6
通讯作者：
A. Cicco
中科院分区：
文献类型：
--
作者：
R. Gunnella;M. Ali;M. Abbas;Francesco D’Amico;E. Principi;A. Cicco
提出并应用了一种测量Si（111）和Si（001）表面熔化和金属化深度分布的新方法。利用俄歇电子和电子能量损失（EELS）谱的不同探测深度来研究从表面到大约1650 K的5-30 μ m范围内的熔融层和金属层的数量。在1400-1650 K的范围内，Si（001）中的熔化被限制在3个原子层，而在Si（111）中，熔化层的数量增长得更快（在约1500 K时为5层），这也由EELS观察到的L（3）边位移所指示。简要讨论了熔融与金属化的关系。
An original approach for measuring the depth profile of melting and metallization of the Si(111) and Si(001) surfaces is proposed and applied. The different probing depths of the Auger electron and electron energy loss (EELS) spectroscopies are exploited to study the number of molten and metallic layers within 5-30 Å from the surface up to about 1650 K. Melting is limited to 3 atomic layers in Si(001) in the range 1400-1650 K while the number of molten layers grows much faster (5 layers at about 1500 K) in Si(111) as also indicated by the L(3)-edge shift observed by EELS. The relationship between melting and metallization is briefly discussed.