Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging
Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging
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DOI：
10.1109/ted.2016.2590946
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发表时间：
2016-09-01
影响因子：
3.1
通讯作者：
Kaczer, Ben
中科院分区：
文献类型：
--
作者：
Duan, Meng;Zhang, Jian Fu;Kaczer, Ben
SRAM的存取晶体管在工作过程中会遭受正偏置温度不稳定性（PBTI）和热载流子老化（HCA）。对电子陷阱的理解仍然是不完整的，并且在这两种应力模式下它们的相似性和差异性的信息很少。本文的主要目的是调查的能量分布，充电和放电性能，和发电方面的负离子。我们发现PBTI和HCA都能使高k电介质导带（E-c）以下1.4eV处的电荷中心带电，这与理论计算相一致。第一次，明确的证据表明，HCA产生新的质子，这是不存在的压力时，PBTI。当充电时，所产生的π ′峰比预先存在的π ′峰深0.2eV。与幂律动力学充电的预先存在的电荷，填充所产生的电荷在几秒钟内饱和，即使在0.9 V的操作偏置。ET代缩短设备的寿命，必须包括在建模HCA。提出了一个循环和反中性化的非线性模型来解释PBTI和HCA的退化，它包括预先存在的循环非线性、生成的循环非线性和反中性化非线性。
The access transistor of SRAM can suffer both positive bias temperature instability (PBTI) and hot carrier aging (HCA) during operation. The understanding of electron traps (ETs) is still incomplete and there is little information on their similarity and differences under these two stress modes. The key objective of this paper is to investigate ETs in terms of energy distribution, charging and discharging properties, and generation. We found that both PBTI and HCA can charge ETs which center at 1.4 eV below conduction band (E-c) of highk dielectric, agreeing with theoretical calculation. For the first time, clear evidences are presented that HCA generates new ETs, which do not exist when stressed by PBTI. When charged, the generated ETs' peak is 0.2 eV deeper than that of preexisting ETs. In contrast with the power law kinetics for charging the preexisting ETs, filling the generated ETs saturates in seconds, even under an operation bias of 0.9 V. ET generation shortens device lifetime and must be included in modeling HCA. A cyclic and antineutralization ETs model is proposed to explain PBTI and HCA degradation, which consists of preexisting cyclic ETs, generated cyclic ETs, and antineutralization ETs.