Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy
Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy
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在分子束外延中使用 GaAs (111)A 衬底可显着改善表面平整度
DOI：
10.1143/jjap.38.635
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发表时间：
1999
影响因子：
1.5
通讯作者：
Y. Hirayama
中科院分区：
文献类型：
--
作者：
H. Yamaguchi;Y. Homma;K. Kanisawa;Y. Hirayama
本文研究了用分子束外延方法在GaAs上同质外延生长GaAs和在GaAs上高失配异质外延生长InAs和InSb时（111）A面的表面平坦性。同质外延生长的GaAs（111）A表面具有宽约1 µm的原子级平坦平台，这使得可以通过原位扫描电子显微镜清晰地成像GaAs的逐层生长过程，与传统使用的（001）表面形成对比，其中高密度的台阶阻碍了清晰的成像。在高度失配的异质外延中，使用（111）A衬底的表面平坦度的改善要剧烈得多。三维岛由Stranski-Krastanov机制的强烈抑制生长的InAs和InSb在GaAs衬底上。研究了Ga（Al）As/InAs/GaAs异质结的横向和纵向电子输运性质，验证了（111）A衬底对异质结电学性质的改善。新型热电子晶体管的应用清楚地表明。
We have studied the surface flatness properties of (111)A planes in both homoepitaxial growth of GaAs on GaAs and highly-mismatched heteroepitaxial growth of InAs and InSb on GaAs by molecular beam epitaxy. The homo-epitaxially grown GaAs (111)A surface has atomically flat terraces as wide as about 1 µm, which make it possible to clearly image the layer-by-layer growth processes of GaAs by in-situ scanning electron microscopy, in contrast with conventionally used (001) surfaces where the high density of steps prevents clear imaging. The surface flatness improvement using (111)A substrates is much more drastic in highly-mismatched heteroepitaxy. The three-dimensional islanding governed by the Stranski-Krastanov mechanism is strongly suppressed for the growth of both InAs and InSb on GaAs substrates. The lateral and vertical electron transport properties of Ga(Al)As/InAs/GaAs heterostructures are studied, verifying the improved electric properties by using the (111)A substrates. The application for novel hot-electron transistors is clearly demonstrated.