Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults
Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults
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基面堆垛层错相交的非极性 GaN/AlGaN 量子阱中的载流子动力学
DOI：
10.1002/pssc.200983574
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Badcock T
中科院分区：
文献类型：
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作者：
Badcock T
我们研究了由基面堆垛层错和反面 GaN 模板层交叉的非极性 GaN/AlGaN 量子阱中载流子的复合动力学。在 GaN 模板中，在基面堆垛层错发射带上测得的光致发光衰减和上升时间都随着发射能量的降低而增加。这与基面堆垛层错内从不太局域化到更深层局域化的载流子转移过程一致。然而，在量子阱结构中，由于量子阱对载流子传输的限制，这种行为受到抑制。我们还发现量子阱中局域激子发射的衰减时间主要由涉及基面堆垛层错的非辐射载流子转移过程主导。 （© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have investigated the recombination dynamics of carriers in non‐polar GaN/AlGaN quantum wells intersected by basal plane stacking faults and ana‐plane GaN template layer. In the GaN template, both the photoluminescence decay and rise times measured across the basal plane stacking fault emission band increase with decreasing emission energy. This is consistent with a carrier transfer process from less localised to more deeply localised states within the basal plane stacking fault. However, in the quantum well structures this behaviour is suppressed due to the restriction in carrier transport imposed by the quantum wells. We also found that the decay time of the localised exciton emission in the quantum wells is dominated by a non radiative carrier transfer process involving the basal plane stacking faults. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)