Morphology control of Si2Te3 nanostructures synthesized by CVD
Morphology control of Si2Te3 nanostructures synthesized by CVD
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DOI：
10.1007/s10854-018-9158-1
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发表时间：
2018-04
期刊：
影响因子：
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通讯作者：
Keyue Wu;J. Cui
中科院分区：
文献类型：
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作者：
Keyue Wu;J. Cui
Si_2Te_3作为一种新型的硅基硫族化合物，近年来作为一种新型的二维层状材料受到了人们的广泛关注。在这项研究中，各种Si 2 Te 3纳米结构，包括垂直的，倾斜的，和水平的板，nanocaptiles，和纳米线生长通过控制生长条件的化学气相沉积。以Au为催化剂合成了Si_2 Te_3纳米锥和纳米线，而在无催化剂的衬底上只得到了纳米片和微米片。发现微板由彼此重叠的多个纳米板组成。纳米锥的生长过程主要是气-固模型，而纳米线的生长过程主要是气-液-固过程。不同形貌的Si_2Te_3纳米结构在电子学和光电子学领域具有潜在的应用前景。
As a silicon-based chalcogenide, Si2Te3has recently attracted attentions as an emerging layered two-dimensional (2D) material. In this study, various Si2Te3nano-structures, including vertical, titled, and horizontal plates, nanotapers, and nanowires were grown by controlling the growth conditions in a chemical vapor deposition. The Si2Te3nanotapers and nanowires were synthesized with Au as a catalyst while only nanoplates and microplates were obtained without catalysts on the substrates. The microplates were found to be composed of multiple nanoplates overlapping with each other. Vapor–Solid model is proposed to dominate the growth of the nanotapers while Vapor-Liquid-Solid is dominant process for the growth of nanowires. The different morphologies of the Si2Te3nanostructures may find potential applications in electronics and optoelectronics.