Correlation Between the Growth Direction, Morphology and Defect Luminescence in Aluminum Nitride Nanowires Synthesized Through Direct Nitridation Method
Correlation Between the Growth Direction, Morphology and Defect Luminescence in Aluminum Nitride Nanowires Synthesized Through Direct Nitridation Method
复制标题
直接氮化法合成氮化铝纳米线生长方向、形貌与缺陷发光的相关性
DOI：
10.1166/sam.2011.1240
复制
发表时间：
2011-10
影响因子：
0.9
通讯作者：
Cui, Qiliang
中科院分区：
文献类型：
--
作者：
Shen, Longhai;Li, Quanjun;Cui, Qiliang
The AlN nanowires with smooth and sawtoothed surface were synthesized in different experimental condition by direct reaction Al with N2. We observed a strong correlation between the growth direction, morphology and defect luminescence in two types of AlN nanowires. Smooth AlN nanowires with uniform diameter grow preferentially along the direction perpendicular to [0001], whereas, the rough AlN nanowires with sawtoothed surface grow preferentially along the [0001] direction. The latter enhanced the intensity of emission band, which may be related to the surface condition of AlN nanowires. The defect luminescence mechanisms of AlN nanowires with different morphology are discussed.
