Tantalum-Nitride Antifuse Electromechanical OTP for Embedded Memory Applications
Tantalum-Nitride Antifuse Electromechanical OTP for Embedded Memory Applications
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DOI：
10.1109/led.2013.2262918
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发表时间：
2013-06
影响因子：
4.9
通讯作者：
Pushpapraj Singh;C. Li;Prakash Pitchappa;Chengkuo Lee
中科院分区：
文献类型：
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作者：
Pushpapraj Singh;C. Li;Prakash Pitchappa;Chengkuo Lee
集成在后端工艺中的嵌入式非易失性存储器（NVM）受到高度关注，特别是对于恶劣环境（高温/辐射或振动）。这封信演示了使用氮化钽微梁作为反熔丝一次性可编程（OTP）NVM。它需要一个单一的掩模工艺，可以集成在集成电路上。典型熔断电流为1 mA，工作电压为4 V，测得的接触电阻<2 k Ω。提出了一种用于后端兼容和低成本OTP NVM集成的单管/单微梁/位混合存储器阵列。
Embedded nonvolatile memory (NVM) integrated in the back-end of line processes are of high interest, particularly for rugged environments (high temperature/radiation or vibration). This letter demonstrates the use of tantalum nitride microbeams as antifuse one-time programmable (OTP) NVM. It needs a single mask process and can be integrated above an integrated circuit. Typical fusing current is 1 mA, operating voltage is 4 V, and the measured contact resistance is <;2 kQ. A hybrid one-transistor/one microbeam/bit memory array is proposed for back-end compatible and low-cost OTP NVM integration.