SOI high-voltage device with step thickness sustained voltage layer
SOI high-voltage device with step thickness sustained voltage layer
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DOI：
10.1049/el:20082131
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发表时间：
2008-01
影响因子：
1.1
通讯作者：
Xian-shu Luo;Bo Zhang;Zhigang Li;Wentong Zhang;Z. Zhan;H. Xu
中科院分区：
文献类型：
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作者：
Xian-shu Luo;Bo Zhang;Zhigang Li;Wentong Zhang;Z. Zhan;H. Xu
提出了一种具有阶跃厚度持续电压层（ST SOI）的新型SOI高压器件。变厚SOI层调制了漂移区的电场，增强了埋设层的电场，从而提高了击穿电压（BV）。具有两步的ST SOI的BV是传统SOI的两倍，保持了低导通电阻（Ron）。
A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region is modulated, and that in the buried layer is enhanced by the variable-thickness SOI layer, resulting in enhancement of breakdown voltage (BV). BV for the ST SOI with two steps is twice as high as that of the conventional SOI, maintaining the low on-resistance (Ron).