Rare earth doped III-nitrides for optoelectronics
Rare earth doped III-nitrides for optoelectronics
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DOI：
10.1051/epjap:2006122
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发表时间：
2006-11-01
影响因子：
1
通讯作者：
Hourahine, B.
中科院分区：
文献类型：
--
作者：
O'Donnell, K. P.;Hourahine, B.
稀土(RE)掺杂的III-氮化物是一种很有前途的可见光显示材料，它是在生长过程中原位掺杂或离子注入和退火法制备的。此外，由于4f间尖锐的光学跃迁的复杂性，它们在理论上极具挑战性，这种跃迁只能通过非中心对称晶体的混合来实现。具有相反宇称的较高能级的内-4f轨道的场。我们回顾了最近关于Er、Eu和Tm掺杂的III-氮化物化合物和合金的实验和理论工作，以期确定RE在这些材料中的晶格位置和导致它们发光的中心的可能的纳米结构。研究发现，孤立的REIII位在光学和电学上都是不活跃的，但与邻近的本征缺陷(最有可能是氮空位)相关联，REIII可以产生一小类类似的光学活性位。这样的一个家族被认为是稀土掺杂III-氮化物光谱的一个共同特征--位置多样性的原因。
Rare-earth (RE) doped III-nitrides, prepared by in-situ doping during growth or by ion implantation and annealing, are promising materials for visible light emitting displays. In addition, they are plantation extremely challenging theoretically, on account of the complexity of the sharp inter-4f optical transitions, which are allowed only through the mixing by non-centrosymmetric crystal. elds of the inner-4f orbitals with higher-lying states of opposite parity. We review recent experimental and theoretical work on Er-, Eu- and Tm-doped III-nitride compounds and alloys which has been carried out with a view to establishing the lattice location of RE in these materials and the probable nanostructure of the centres which are responsible for their luminescence. The isolated site REIII is found to be both optically and electrically inactive, but in association with neighbouring intrinsic defects (most probably nitrogen vacancies) REIII can generate a small family of similar optically active sites. Such a family is held to be responsible for the site multiplicity that is a common feature of the spectroscopy of RE-doped III-nitrides.