Annealing Effects on AlGaN ∕ GaN HEMTs Employing Excimer Laser Pulses
Annealing Effects on AlGaN ∕ GaN HEMTs Employing Excimer Laser Pulses
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DOI：
10.1149/1.2116187
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发表时间：
2005-12
影响因子：
--
通讯作者：
M. Ha;Seung-Chul Lee;J. Her;K. Seo;M. Han
中科院分区：
文献类型：
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作者：
M. Ha;Seung-Chul Lee;J. Her;K. Seo;M. Han
提出了一种利用准分子激光脉冲进行退火的新方法来改善高电子迁移率晶体管（HEMT）的传输特性和击穿电压。在肖特基栅极金属化之后，XeCl准分子激光脉冲退火未钝化的HEMT。由于激光脉冲的横向热扩散，肖特基栅金属和GaN层之间的界面缺陷减少。实验结果表明，激光脉冲退火后HEMT器件的漏电流和峰值非本征电流分别为和，而未退火器件分别为和。
A new annealing method employing excimer laser pulses is proposed to improve the transfer characteristics and the breakdown voltage of the high electron mobility transistor (HEMT). The XeCl excimer laser pulses annealed the unpassivated HEMT after the Schottky gate metallization. The interface defects between the Schottky gate metal and the GaN layer decreased due to the lateral heat diffusion of the laser pulses. The experimental results show that the drain current and the peak extrinsic transconductance of the HEMT after laser pulses annealing were and while a virgin device exhibited and, respectively.