Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
复制标题
基于室温多数载流子传输的反常高效 InAs 纳米线光电晶体管
DOI：
10.1002/adma.201403664
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发表时间：
2014-12-23
影响因子：
29.4
通讯作者：
Lu, Wei
中科院分区：
文献类型：
--
作者：
Guo, Nan;Hu, Weida;Lu, Wei
研究了基于多数载流子主导光探测的类核/壳型n型InAs纳米线光电晶体管。在光学照明下，由磁芯产生的电子被激发到自组装的近表面光电门控层中，形成内置电场，显著调节磁芯电导。在室温下获得了异常高的光导增益和快速的响应时间。
Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.