Well-ordered arranging of Ag nanoparticles in SiO2/Si by ion implantation
Well-ordered arranging of Ag nanoparticles in SiO2/Si by ion implantation
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通过离子注入在 SiO2/Si 中有序排列 Ag 纳米颗粒
DOI：
10.1016/j.apsusc.2012.04.001
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
F. Nishiyama
中科院分区：
文献类型：
--
作者：
K. Takahiro;Y. Minakuchi;K. Kawaguchi;T. Isshiki;K. Nishio;M. Sasase;S. Yamamoto;F. Nishiyama
已被发现的银纳米粒子的有序排列的银离子的投影范围和范围的结束对应的深度注入SiO2。用350 keV-Ag离子注入Si衬底上热生长的300 nm厚的SiO_2薄膜，注入剂量为0.37-1.2× 1017 ions/cm ~ 2，注入电流密度为4μA/cm ~ 2。截面透射电镜和扫描透射电镜观察表明，在SiO2/Si界面处存在直径为25- 40 nm的Ag纳米颗粒的二维阵列，以及沿着SiO2/Si界面排列的Ag纳米颗粒的δ层自组织结构。X射线光电子能谱（XPS）和X射线衍射（XRD）证实了这些Ag纳米颗粒在环境空气中储存19-21个月时对氧化和硫化的稳定性。
Well-ordered arrangements of Ag nanoparticles have been found for Ag-implanted SiO2at depths corresponding to the projected range and end of range of Ag ions. Thermally grown SiO2films of 300nm thick on Si were implanted with 350keV-Ag ions to fluences of 0.37–1.2×1017ions/cm2at a current density about 4μA/cm2. Cross-sectional transmission electron microscopy and scanning transmission electron microscopy reveal the presence of a two-dimensional array of Ag nanoparticles of 25–40nm in diameter located at a depth of ∼130nm, together with the self-organization of δ-layer of tiny Ag nanoparticles aligned along the SiO2/Si interface. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) confirm the stability of these Ag nanoparticles against oxidation and sulfidation when stored in ambient air for 19–21 months.
影响因子：
64.8
作者：
Voyles, PM;Muller, DA;Gossmann, HJL
通讯作者：
Gossmann, HJL