Crystal growth and the fast reaction paradox: Mathematical resolution and implications for habit and compositional zoning
Crystal growth and the fast reaction paradox: Mathematical resolution and implications for habit and compositional zoning
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晶体生长和快速反应悖论：数学分辨率以及对习性和成分分区的影响
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发表时间：
2009
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影响因子：
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通讯作者：
P. Ortoleva
中科院分区：
文献类型：
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作者：
P. Ortoleva
晶体生长介质中晶体表面附近发生的快速反应（例如，H+ + HCO-3 ↔ H2CO3）可能与晶体分子式单元生成的化学计量相冲突（例如，CO2-3 很容易掺入方解石中，但 H+ 则不然）。结果，形成了薄的快速反应边界层（FRBL），其中快速反应失去平衡，即使它们在远离晶体表面的地方保持平衡。 FRBL 校正进出晶体表面的成分通量；不考虑 FRBL 会导致违反质量守恒定律。通过展示如何在快速反应极限下求解晶体生长方程而不违反质量守恒，解决了这个“悖论”。由于文献中没有理解这一悖论，因此应重新审查所得出的模型和地质结论。
Fast reactions in the medium from which a crystal is growing (e.g., H+ + HCO-3 ↔ H2CO3) occurring near the crystal surface can conflict with the stoichiometry of crystal formula-unit creation (e.g., CO2-3 is readily incorporated in calcite but H+ is not). As a result, a thin fast-reaction boundary layer (FRBL) is created within which the fast reactions are out of equilibrium even though they are maintained at equilibrium far from the crystal surface. The FRBL corrects the fluxes of components to and from the surface of the crystal; not taking the FRBL into account leads to violation of mass conservation. This “paradox” is resolved by showing how the equations of crystal growth can be solved in the fast-reaction limit without violating mass conservation. As this paradox was not understood in the literature, models and geological conclusions drawn should be re-examined.