An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures
An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures
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DOI：
10.1038/nnano.2012.166
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发表时间：
2012-11-01
影响因子：
38.3
通讯作者：
Branz, Howard M.
中科院分区：
文献类型：
--
作者：
Oh, Jihun;Yuan, Hao-Chih;Branz, Howard M.
硅纳米线和纳米孔阵列有望降低制造成本，提高光伏器件的功率转换效率。然而，到目前为止，基于纳米结构硅的光伏电池由于与纳米结构相关的增强的光生载流子复合而表现出比常规电池更低的功率转换效率。在这里，我们确定并分别测量表面复合和俄歇复合在晶片基纳米结构硅太阳能电池。通过确定每个机制占主导地位的结掺杂浓度的制度，我们能够设计和制造一个独立确认的18.2%效率的纳米结构的“黑硅”电池，它不需要通常需要达到相当的性能水平的涂层（一个或多个）。我们的研究结果表明，设计规则的高效高表面积的太阳能电池与纳米和微结构的半导体吸收剂。
Silicon nanowire and nanopore arrays promise to reduce manufacturing costs and increase the power conversion efficiency of photovoltaic devices. So far, however, photovoltaic cells based on nanostructured silicon exhibit lower power conversion efficiencies than conventional cells due to the enhanced photocarrier recombination associated with the nanostructures. Here, we identify and separately measure surface recombination and Auger recombination in wafer-based nanostructured silicon solar cells. By identifying the regimes of junction doping concentration in which each mechanism dominates, we were able to design and fabricate an independently confirmed 18.2%-efficient nanostructured 'black-silicon' cell that does not need the antireflection coating layer(s) normally required to reach a comparable performance level. Our results suggest design rules for efficient high-surface-area solar cells with nano-and microstructured semiconductor absorbers.