Ionized-impurity scattering due to clusters of correlated impurities.
Ionized-impurity scattering due to clusters of correlated impurities.
复制标题
由于相关杂质簇而导致的电离杂质散射。
DOI：
10.1103/physrevb.38.3391
复制
发表时间：
1988
影响因子：
3.7
通讯作者：
Widdershoven Fp
中科院分区：
文献类型：
--
作者：
Widdershoven Fp
提出了一种描述杂质簇内杂质位置之间的相关性对电离杂质散射导致的电子迁移率影响的理论。该理论用于计算 77 K 温度下存在相关杂质簇的 GaAs 中的电子迁移率。
A theory describing the influence of correlation between impurity positions within impurity clusters on the electron mobility due to ionized-impurity scattering is presented. The theory is applied to calculate the electron mobility in GaAs at a temperature of 77 K in the presence of correlated impurity clusters.