Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
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DOI：
10.1115/1.4027914
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发表时间：
2014-09
期刊：
影响因子：
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通讯作者：
Hiro Tanaka;T. Hidaka;S. Izumi;S. Sakai
中科院分区：
文献类型：
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作者：
Hiro Tanaka;T. Hidaka;S. Izumi;S. Sakai
在半导体器件中，由于固有的压应力，精细图案化可能会导致结构不稳定。我们研究了这样一个不稳定的现象，平面外摆动的图案化结构与掩模介电脊，以提高这些高度小型化的设备的产量。我们简单的连续体方法使用无量纲参数来控制脊摆动的分叉阈值。再加上建模的蚀刻过程中，我们的方法揭示了屈曲的发病，以及与实验数据一致。为了研究脊宽度和弹性基底对屈曲应力和变形的影响，我们使用有限元法（FEM）进行了数值分析。
In semiconductor devices, fine patterning can cause structural instability because of intrinsic compressive stress. We studied one such instability phenomenon, out-of-plane wiggling of a patterned structure with mask–dielectric ridges, to improve the yield of these highly miniaturized devices. Our simple continuum approach uses dimensionless parameters to control the bifurcation threshold of ridge wiggling. Coupled with modeling the etching process, our approach revealed the onset of buckling, agreeing well with experimental data. To study the influence of the ridge width and the elastic substrate on buckling stress and deformation, we performed numerical analyses using a finite element method (FEM).