Non-planar Selective Area Growth and Characterization of GaN and AlGaN
Non-planar Selective Area Growth and Characterization of GaN and AlGaN
复制标题
GaN 和 AlGaN 的非平面选择性区域生长和表征
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
J. Christen
中科院分区：
文献类型：
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作者：
S. Heikman;S. Keller;S. Denbaars;U. Mishra;F. Bertram;J. Christen
采用金属有机物化学气相沉积法在SiO2和AlN掩模的选择性刻蚀GaN样品上进行了GaN和Al0.1Ga0.9N的非平面选择性区域生长。同时发生在底部表面和蚀刻的侧壁上的生长，导致特征在高度上延伸到接近掩模边缘的蚀刻的梅萨上方。对于GaN，观察到显著的掩模扩散增强的生长速率，而对于Al0.1Ga0.9N，增强不显著。用光谱分辨阴极发光显微镜研究了掩模边缘附近的Al成分，发现在掩模边缘的0.6 µm内较低。采用传输线模型（TLM）结构研究了GaN的电学性质，在掩模边缘附近和远离掩模边缘处。的片电导被发现是大大增强附近的掩模边缘，有关增强n型杂质纳入在该区域的非c-平面生长。掩模材料的选择，SiO2或AlN，也被证明会影响片电导。
Non-planar selective area growth of GaN and Al0.1Ga0.9N was performed by metalorganic chemical vapor deposition, on selectively etched GaN samples masked with SiO2 and AlN. Simultaneous growth on bottom surface and etched side walls occurred, resulting features extending in height above the etched mesa near the mask edge. For GaN, a significant mask-diffusion enhanced growth rate was observed, while for Al0.1Ga0.9N the enhancement was insignificant. The Al composition was investigated near the mask edge, with spectrally resolved cathodoluminescence microscopy, and was found to be lower within 0.6 µm of the mask edge. The electrical properties of GaN was investigated using transmission line model (TLM) structures, near and far from the mask edge. The sheet conductance was found to be greatly enhanced near the mask edge, related to enhanced n-type impurity incorporation during the non-c-plane growth in this region. The choice of mask material, SiO2 or AlN, was also shown to influence the sheet conductance.