Deposition of Kesterite Cu2ZnSnS4 (CZTS) Thin Films by Spin Coating Technique for Solar Cell Application
Deposition of Kesterite Cu2ZnSnS4 (CZTS) Thin Films by Spin Coating Technique for Solar Cell Application
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DOI：
10.1016/j.egypro.2013.05.058
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Sanjay Kumar Swami;Anuj Kumar;V. Dutta
中科院分区：
文献类型：
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作者：
Sanjay Kumar Swami;Anuj Kumar;V. Dutta
采用旋涂法在钠钙玻璃上制备了Cu_2ZnSnS_4（CZTS）薄膜。通过旋涂通过将氯化铜（II）、氯化锌（II）、氯化锡（IV）和噻托溴铵溶解在2-甲氧基乙醇中制备的溶液来制备CZTS膜。X-射线衍射分析表明，在（112）、（220）和（312）晶面上形成了锌黄锡矿相。拉曼光谱表明在333 cm-1处存在锌黄锡矿主峰。SEM研究表明，CZTS薄膜表面均匀。电性能测试表明，室温下样品的p型电导率、电阻率和迁移率分别为：0.014 Ω·cm、7.9 × 10 ~（19）cm ~（-3）和5.43 cm ~ 2 V ~（-1）s ~（-1）。CZTS膜显示出104 cm-1的吸光度，光学带隙为1.5eV。因此，CZTS膜可以使用简单的旋涂技术制备，但是需要通过后沉积来改善膜性质以制备光伏质量膜。
The thin films of Cu2ZnSnS4(CZTS) have been successfully deposited on soda lime glass by spin coating technique. CZTS films were prepared by spin coating of a solution prepared by dissolving of copper (II) chloride, zinc (II) chloride, tin (IV) chloride and Thiourea in 2-Methoxyethanol. The X-ray diffraction studies showed the formation of kesterite phase with the peaks corresponding to (112), (220) and (312) planes. Raman spectrum indicated the presence of principal kesterite peak at 333 cm−1. SEM study showed that the surface of CZTS film was uniform. The electrical measurements showed the p-type conductivity, resistivity ∼0.014 Ω-cm with carrier concentration ∼7.9x1019cm-3and mobility ∼5.43 cm2V-1s-1at room temperature. CZTS film showed optical absorbance of 104 cm-1 with optical band gap of 1.5 eV. Thus, CZTS films can be made using a simple spin coating technique, but improvement in the film properties by post deposition needs to be done for making photovoltaic quality films.