LT-GaAs detector with 451 fs response at 1.55 /spl mu/m via two-photon absorption
LT-GaAs detector with 451 fs response at 1.55 /spl mu/m via two-photon absorption
复制标题
LT-GaAs 探测器通过双光子吸收在 1.55 /spl mu/m 下具有 451 fs 响应
DOI：
10.1049/el:19990109
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发表时间：
1999
影响因子：
1.1
通讯作者：
D. Streit
中科院分区：
文献类型：
--
作者：
H. Erlig;Shamino Wang;T. Azfar;A. Udupa;H. Fetterman;D. Streit
采用双滑动接触取样法测量了低温生长GaAs共面带线开关在1.55 μ/m/spl下的脉冲光响应。该响应归因于双光子吸收，所观察到的光电流对平均入射照明的二次依赖性证实了这一点。该器件的响应半高宽为451 fs，3 dB带宽为190 GHz，这是迄今为止在该波长下从LT-GaAs开关测量的最快响应。的响应峰值是线性依赖于所施加的偏压，并表现出强烈的依赖于入射场偏振。这些器件可以在1.55 /spl μ/m的高时间分辨率采样中找到应用。
The impulse photoresponse from low temperature (LT) grown GaAs coplanar stripline switches was measured at 1.55 /spl mu/m using double sliding-contact sampling. The response was attributed to two-photon absorption as confirmed by the observed quadratic dependence of the photocurrent on average incident illumination. The devices exhibited a response full width at half maximum of 451 fs and a 3 dB bandwidth of 190 GHz, which is, to date, the fastest response measured from LT-GaAs switches at this wavelength. The response peak was linearly dependent on the applied bias and showed a strong dependence on incident field polarisation. These devices could find applications in high temporal resolution sampling at 1.55 /spl mu/m.