Adsorption of phosphorus molecules evaporated from an InP solid source on the Si(100) surface
Adsorption of phosphorus molecules evaporated from an InP solid source on the Si(100) surface
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从 InP 固体源蒸发的磷分子在 Si(100) 表面上的吸附
DOI：
10.1103/physrevb.87.155316
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发表时间：
2013
影响因子：
3.7
通讯作者：
and David Bowler
中科院分区：
文献类型：
--
作者：
Keisuke Sagisaka;Michael Marz;Daisuke Fujita;and David Bowler
用扫描隧道显微镜（STM）和密度泛函理论（DFT）研究了InP蒸发的磷分子在Si（100）表面的吸附.利用STM在Si（100）表面观察到五种不同的磷吸附物结构（四种为磷二聚体结构，一种为磷四聚体结构）。偏置相关的STM图像和模拟图像之间的比较的基础上的DFT计算确定的吸附位点和结构的这些吸附物。我们还讨论了它们的电子结构和稳定性。此外，STM诱导的磷吸附物的结构转换的最低能量的状态显示。
The adsorption of phosphorus molecules evaporated from InP onto the Si(100) surface has been studied by using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Five distinct structures of phosphorus adsorbates (four structures for phosphorus dimers and one for a phosphorus tetramer) were observed on the Si(100) surface by STM. Comparisons between bias-dependent STM images and simulated images based on the DFT calculation determined the adsorption sites and structures of these adsorbates. We also discuss their electronic structures and stabilities. Additionally, STM-induced structural conversions of the phosphorus adsorbates to the state with the minimum energy are shown.