Oligofuran-containing molecules for organic electronics
Oligofuran-containing molecules for organic electronics
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DOI：
10.1039/c3tc00079f
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发表时间：
2013-01-01
影响因子：
6.4
通讯作者：
Perepichka, Dmitrii F.
中科院分区：
文献类型：
--
作者：
Gidron, Ori;Dadvand, Afshin;Perepichka, Dmitrii F.
我们描述了一系列基于呋喃的共轭低聚物，如未取代的，己基和苯乙烯基封端的线性低聚呋喃和低聚呋喃取代的蒽衍生物的合成，表征和场效应晶体管（FET）性能。所有研究的低聚呋喃都显示出高的荧光和良好的热稳定性。以低聚呋喃为有源层制备的顶部接触有机FET（OFFET）显示出空穴迁移率（类似于0.01至0.07 cm（2）V-1 s（-1））和开/关比（10（4）至10（6））与相应的低聚噻吩类似物相当，而与低聚噻吩相比，基于低聚呋喃的OFFERS显示的阈值电压由于更高的HOMO能量而显著降低。在底部接触几何结构中观察到的基于低聚呋喃的OFFEs中的电致发光受到电子注入的限制。总体而言，我们发现呋喃结构单元是替代光电材料中噻吩的优秀候选者。
We describe the synthesis, characterization and field effect transistor (FET) properties of a series of furan-based conjugated oligomers such as unsubstituted, hexyl- and styryl-capped linear oligofurans and oligofuran-substituted anthracene derivatives. All studied oligofurans show high fluorescence and good thermal stability. Top contact organic FETs (OFETs) fabricated with oligofurans as the active layer show hole mobilities (similar to 0.01 to 0.07 cm(2) V-1 s(-1)) and on/off ratios (10(4) to 10(6)) on a par with the corresponding oligothiophene analogues, while the threshold voltages displayed by oligofuran-based OFETs are significantly reduced due to higher HOMO energies as compared to those of oligothiophenes. Electroluminescence observed in oligofuran-based OFETs in a bottom-contact geometry is limited by electron injection. Overall, we find that furan building blocks are excellent candidates for replacing thiophene in optoelectronic materials.