One-step Construction of Buried a-Si/c-Si Junction Photocathodes for Boosting Photoelectrochemical Hydrogen Production
One-step Construction of Buried a-Si/c-Si Junction Photocathodes for Boosting Photoelectrochemical Hydrogen Production
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DOI：
10.1016/j.cej.2022.140898
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发表时间：
2022-12
影响因子：
15.1
通讯作者：
Sijie Li;Huiwen Lin;Gaoliang Yang;Xiaohui Ren;Shunqin Luo;Jinhua Ye
中科院分区：
文献类型：
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作者：
Sijie Li;Huiwen Lin;Gaoliang Yang;Xiaohui Ren;Shunqin Luo;Jinhua Ye
硅基光电阴极用于光电化学制氢的活性主要受到光电压不足和易(光)腐蚀的限制，需要复杂的掺杂或沉积技术来改进。本文提出了一种温和可行的制备非晶态硅/晶态硅(a-Si/c-Si)结光电阴极的方法。A-Si层起到了电子转移介质的作用，形成了具有大能带位移的a-Si/c-Si埋结，从而保证了电荷转移的简便性。同时，a-Si层作为生长衬底，获得了可控的铂纳米颗粒。与可逆氢电极相比，铂/a-Si/c-Si光电阴极的起始电位为0.42nV。在Pt/a-Si/c-Si上获得了高达−35.0 mA/cm−2AT 0 VRHE光电流，远高于未加a-Si层的光电流。本研究为基于硅结结构的平面硅基光电阴极的光响应性能的改善提供了一种实用的方法。
The activity of Si-based photocathode for photoelectrochemical hydrogen production is mainly restricted by inadequate photovoltage and easy (photo)-corrosion, requiring complex doping or deposition techniques for improvement. Herein, a mild and feasible strategy is proposed to fabricate an amorphous Si/crystal Si (a-Si/c-Si) junction photocathode with co-deposited Pt cocatalyst. The a-Si layer acts as an electron transfer mediator to form an a-Si/c-Si buried junction with large energy band shift, thereby ensuring facile charge transfer. Meanwhile, the a-Si layer serves as a growth substrate to obtain controllable Pt nanoparticles. The Pt/a-Si/c-Si photocathode shows an onset potential of 0.42 V vs reversible hydrogen electrode (VRHE). A photocurrent up to − 35.0 mA cm−2at 0 VRHEis obtained on Pt/a-Si/c-Si, which is much higher than that without a-Si layer. This study provides a practical manner for improving the photoresponse of planar Si-based photocathodes based on the construction of Si junction.