Contact Electrification Field-Effect Transistor
Contact Electrification Field-Effect Transistor
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DOI：
10.1021/nn5039806
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发表时间：
2014-08-01
期刊：
影响因子：
17.1
通讯作者：
Wang, Zhong Lin
中科院分区：
文献类型：
--
作者：
Zhang, Chi;Tang, Wei;Wang, Zhong Lin
利用耦合的金属氧化物半导体场效应晶体管和摩擦纳米发电机，我们展示了一种外力触发/控制的接触起电场效应晶体管（CE-FET），其中栅极和源极之间的静电势是由栅极材料和“外来”物体之间的垂直接触起电产生的，漏极和源极之间的载流子传输可以通过接触感应静电势而不是传统的栅极电压来调节/控制。当两个接触摩擦层垂直间隔80μm时，在漏极电压为5V时，漏电流从耗尽模式下从13.4μA减小到1.9μA，在增强模式下从2.4μA增加到12.1μA。与通过在界面/结处充电的应变诱导压电极化来控制的压电器件相比，CE-FET极大地扩展了传感范围以及与半导体结合的材料选择。 CE-FET 可能在传感器、人体硅技术接口、MEMS、纳米机器人和有源柔性电子产品中具有重要应用。基于CE-FET的基本原理，提出了摩擦电子学领域，用于使用摩擦起电产生的静电势作为“栅极”电压来制造的器件，以调整/控制传统半导体器件中的电荷载流子传输。通过摩擦电、半导体和光激发之间的三向耦合，预计在不久的将来将探索许多潜在的重要研究领域。
Utilizing the coupled metal oxide semiconductor field-effect transistor and triboelectric nanogenerator, we demonstrate an external force triggered/controlled contact electrification field-effect transistor (CE-FET), in which an electrostatic potential across the gate and source is created by a vertical contact electrification between the gate material and a "foreign" object, and the carrier transport between drain and source can be tuned/controlled by the contact induced electrostatic potential instead of the traditional gate voltage. With the two contacted frictional layers vertically separated by 80 mu m, the drain current is decreased from 13.4 to 1.9 mu A in depletion mode and increased from 2.4 to 12.1 mu A in enhancement mode at a drain voltage of 5 V. Compared with the piezotronic devices that are controlled by the strain induced piezoelectric polarization charged at an interface/junction, the CE-FET has greatly expanded the sensing range and choices of materials in conjunction with semiconductors. The CE-FET is likely to have important applications in sensors, human silicon technology interfacing, MEMS, nanorobotics, and active flexible electronics. Based on the basic principle of the CE-FET, a field of tribotronics is proposed for devices fabricated using the electrostatic potential created by triboelectrification as a "gate" voltage to tune/control charge carrier transport in conventional semiconductor devices. By the three-way coupling among triboelectricity, semiconductor, and photoexcitation, plenty of potentially important research fields are expected to be explored in the near future.