InAs/GaSb Superlattice Detectors Operating at Room Temperature
InAs/GaSb Superlattice Detectors Operating at Room Temperature
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DOI：
10.1109/jstqe.2006.882641
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发表时间：
2006-11
影响因子：
4.9
通讯作者：
E. Plis;Sang Jun Lee;Zhimei Zhu;A. Amtout;S. Krishna
中科院分区：
文献类型：
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作者：
E. Plis;Sang Jun Lee;Zhimei Zhu;A. Amtout;S. Krishna
我们研究了基于InAs/GaSb应变层超晶格（SLS）中的II型跃迁的中红外探测器。采用固体源分子束外延技术生长了SLS异质结构，并通过双晶X射线衍射、透射电子显微镜、光致发光和吸收光谱等测试手段对其进行了表征。采用皮秒激发相关法（PEC）和可变阵列二极管分析法（瓦达）研究了硫化铵水溶液的钝化效果。未钝化样品的表面复合速度为9.5 × 105 cm/s，钝化样品的表面复合速度为4.0 × 105 cm/s。NIP二极管的生长和制造与300个周期的8 ML InAs/8 ML GaSb SLS在有源区。在室温下观察到具有约5 μ m的截止波长的光谱响应，其中约翰逊噪声限制D* = 4.6 × 109 cm. Hz 1/2/W，并且在Vb=-0.3 V下转换量子效率为67
We have investigated mid-infrared detectors based on type-II transitions in InAs/GaSb strain layer superlattices (SLS). The SLS heterostructures were grown by solid source molecular beam epitaxy and were characterized by double crystal X-ray diffraction, transmission electron microscopy, photoluminescence and absorption measurements. The effect of aqueous ammonium sulfide passivation was investigated using picosecond excitation correlation (PEC) and variable array diode analysis (VADA). The surface recombination velocity was estimated to be 9.5times105 cm/s for the unpassivated sample and 4.0times105 cm/s for the passivated sample. NIP diodes were grown and fabricated with 300 periods of 8 ML InAs/8 ML GaSb SLS in the active region. Spectral response with lambdacut-off~5mum was observed at room temperature with a Johnson noise limited D* =4.6times109 cm.Hz1/2/W and a conversion quantum efficiency of 67% at Vb=-0.3 V. Scattering in the substrate was ignored for these measurements