Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells
Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells
复制标题
DOI：
10.1143/jjap.47.8452
复制
发表时间：
2008-11
影响因子：
1.5
通讯作者：
J. Sritharathikhun;H. Yamamoto;S. Miyajima;A. Yamada;M. Konagai
中科院分区：
文献类型：
--
作者：
J. Sritharathikhun;H. Yamamoto;S. Miyajima;A. Yamada;M. Konagai
本征氢化非晶氧化硅（i-a-SiO：H）膜是在约200 °C的低衬底温度下通过甚高频等离子体增强化学气相沉积（60 MHz VHF-PECVD）沉积的，用作p型氢化微晶氧化硅/n型晶体硅（p-µc-SiO：H/n-c-Si）异质结太阳能电池中的前缓冲层。我们发现，在i-a-SiO：H缓冲层中的氧浓度强烈地影响太阳能电池的性能，并且通过氧的添加改善了量子效率（QE）的短波长响应。采用p-µc-SiO：H/i-a-SiO：H/n-Si [Czochralski（CZ），200 µm，（100）]/i-a-Si：H/n-a-Si：H/Ag/Al配置，我们实现了17.9%的效率，Voc为671 mV。
Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films deposited by very high frequency plasma-enhanced chemical vapor deposition (60 MHz VHF-PECVD) at a low substrate temperature of approximately 200 °C were used as a front buffer layer in p-type hydrogenated microcrystalline silicon oxide/n-type crystalline silicon (p-µc-SiO:H/n-c-Si) heterojunction solar cells. We found that the oxygen concentration in the i-a-SiO:H buffer layer strongly affected the solar cell performance and that the short wavelength response in quantum efficiency (QE) was improved by oxygen addition. Employing a p-µc-SiO:H/i-a-SiO:H/n-Si [Czochralski (CZ), 200 µm, (100)]/i-a-Si:H/n-a-Si:H/Ag/Al configuration, we achieved an efficiency of 17.9% with Voc of 671 mV.