Effect of Ar+ ion assist on the properties of a-C:H films deposited on a trench
Effect of Ar+ ion assist on the properties of a-C:H films deposited on a trench
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DOI：
10.1016/j.tsf.2017.04.011
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发表时间：
2017-06-01
期刊：
影响因子：
2.1
通讯作者：
Choi, Junho
中科院分区：
文献类型：
--
作者：
Hirata, Yuki;Onishi, Koeki;Choi, Junho
在这项研究中，使用甲苯和Ar的前驱气体混合物在沟槽（20毫米间距和10毫米深度）上沉积a-C:H薄膜，并研究了Ar流量比对薄膜性能的影响。使用基于双极型等离子体的离子注入和沉积技术在-2kV的负脉冲电压下沉积a-C:H薄膜。分别通过表面轮廓测量、纳米压痕和微划痕测试来测量所制备的a-C:H薄膜的机械性能，包括内应力、硬度和粘附强度。此外，通过拉曼光谱和傅里叶变换红外光谱（FTIR）评估了a-C：H薄膜的微观结构。结果表明，Ar 的添加改善了沟槽表面的厚度均匀性，特别是在 Ar 流量比为 80% 时。随着Ar流量比的增加，沟槽顶面和底面的薄膜趋于从PLC结构转变为DLC结构，从而导致机械性能显着提高。在侧壁的情况下，由于Ar+离子轰击和溅射效应，随着Ar流量比的增加，薄膜倾向于变成更加GLC的结构。 (C) 2017 Elsevier B.V. 保留所有权利。
In this study, a precursor gas mixture of toluene and Ar was used for the deposition of a-C:H films on a trench (20-mm pitch and 10-mm depth), and the effect of the Ar flow ratio on the film properties was investigated. The a-C: H films were deposited using a bipolar-type plasma based ion implantation and deposition technique under a negative pulse voltage of -2 kV. The mechanical properties of the prepared a-C: H films, including internal stress, hardness and adhesion strength, were measured by means of surface profilometry, nanoindentation and a microscratch test, respectively. Furthermore, the microstructure of a-C: H films was evaluated by Raman spectroscopy and Fourier transform infrared spectroscopy ( FTIR). The results showed that the thickness uniformity across the trench surface is improved by the addition of Ar, in particular, at an Ar flow ratio of 80%. The film on the top and bottom surfaces of the trench tends to change from a PLC to DLC structure with increasing Ar flow ratio, resulting in a significant improvement of mechanical properties. In the case of the sidewall, the film tends to change to a more GLC structure with increasing Ar flow ratio due to the Ar+ ion bombardment and sputtering effect. (C) 2017 Elsevier B.V. All rights reserved.