Nonlinear Contact Effects in Staggered Thin-Film Transistors
Nonlinear Contact Effects in Staggered Thin-Film Transistors
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DOI：
10.1103/physrevapplied.8.054012
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发表时间：
2017-11-07
影响因子：
4.6
通讯作者：
Klauk, Hagen
中科院分区：
文献类型：
--
作者：
Fischer, Axel;Zuendorf, Hilke;Klauk, Hagen
薄膜晶体管 (TFT) 的静态和动态电气特性通常受到寄生接触电阻的限制，特别是对于沟道长度较小的 TFT。对于尽可能最小的接触电阻，交错器件架构比具有较大注入区域的共面架构具有普遍优势。由于电荷传输发生在较大的区域内，因此为交错 TFT 开发精确的分析器件模型本质上更加困难。因此，大多数交错 TFT 的分析模型都假设接触电阻是线性的，尽管人们普遍认为事实并非如此。在这里，我们引入了一种半现象学方法，基于高度离散的等效网络电路来精确拟合实验数据，明确考虑接触电阻的固有非线性。该模型使我们能够以相对较短的计算时间研究非线性接触电阻对不同接触布局的交错 TFT 的静态和动态性能的影响。器件参数的精确提取使我们能够计算晶体管的行为以及实际电路中优化的潜力。
The static and dynamic electrical characteristics of thin-film transistors (TFTs) are often limited by the parasitic contact resistances, especially for TFTs with a small channel length. For the smallest possible contact resistance, the staggered device architecture has a general advantage over the coplanar architecture of a larger injection area. Since the charge transport occurs over an extended area, it is inherently more difficult to develop an accurate analytical device model for staggered TFTs. Most analytical models for staggered TFTs, therefore, assume that the contact resistance is linear, even though this is commonly accepted not to be the case. Here, we introduce a semiphenomenological approach to accurately fit experimental data based on a highly discretized equivalent network circuit explicitly taking into account the inherent nonlinearity of the contact resistance. The model allows us to investigate the influence of nonlinear contact resistances on the static and dynamic performance of staggered TFTs for different contact layouts with a relatively short computation time. The precise extraction of device parameters enables us to calculate the transistor behavior as well as the potential for optimization in real circuits.