FORMATION OF ANION VACANCIES BY LANGMUIR EVAPORATION FROM INP(110) AND GAAS(110) SURFACES AT LOW-TEMPERATURES
FORMATION OF ANION VACANCIES BY LANGMUIR EVAPORATION FROM INP(110) AND GAAS(110) SURFACES AT LOW-TEMPERATURES
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DOI：
10.1103/physrevb.51.9696
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发表时间：
1995-04-15
影响因子：
3.7
通讯作者：
LAGALLY, MG
中科院分区：
文献类型：
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作者：
EBERT, P;HEINRICH, M;LAGALLY, MG
用扫描隧道显微镜观察到InP和GaAs(110)表面存在低温朗缪尔蒸发区。它的特点是即使在室温下也能形成带正电荷的单阴离子。在293~480K温度范围内，研究了InP上空位的形成与时间的关系，并在室温下研究了GaAs上空位的形成。在InP上，空位浓度在435K达到最大值，在此温度下，P表面有1.2%的空位。温度越高，浓度越低。观察到的现象一方面是P-空位-吸附原子对的产生，然后是P2分子的形成和解吸，另一方面是磷从块体中向外扩散。
A low-temperature Langmuir-evaporation regime is observed by scanning tunneling microscopy on InP and GaAs (110) surfaces. It is characterized by the formation of positively charged anion monovacancies even at room temperature. This vacancy formation has been studied as a function of time on InP between 293 and 480 K and on GaAs at room temperature. On InP the maximum vacancy concentration is obtained at 435 K. At this temperature 1.2% of the P surface sites are vacant. At higher temperatures the concentration decreases. The observations are explained by a competition between, on the one hand, P-vacancy–adatom pair production followed by P 2 molecule formation and desorption and, on the other hand, phosphorus outdiffusion from the bulk.