Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells.
Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells.
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DOI：
10.1021/am403243g
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发表时间：
2013-09
影响因子：
9.5
通讯作者：
A. Younis;Dewei Chu;Ionsecu Mihail;Sean Li
中科院分区：
文献类型：
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作者：
A. Younis;Dewei Chu;Ionsecu Mihail;Sean Li
我们报道了一种新颖且简便的方法来制造基于自组装 CeO2 纳米立方体的电阻开关存储器件。研究发现该器件表现出优异的双极电阻开关特性，高电阻状态 (HRS/OFF) 与低电阻状态 (LRS/ON) 之比为 10(4)、更好的均匀性以及高达 480 K 的稳定性。讨论了氧空位的存在及其作用，以解释所制造器件中的电阻开关现象。此外，还讨论了薄膜厚度对载流子浓度的影响以及估计的电场强度与开关（OFF/ON）比的关系。
We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.